0.20鈩?/div>
I
D
-18A
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
REF:MIL-PRF-19500/595
100V, P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
庐
HEXFET
庐
MOSFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor鈥檚 totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Surface Mount
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25掳C
ID @ VGS = -10V, TC = 100掳C
IDM
PD @ TC = 25掳C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
-18
-11
-72
125
1.0
卤20
500
-18
12.5
-5.0
-55 to 150
300 (for 5 S)
2.6(typical)
Units
A
W
W/掳C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
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09/22/03
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