鈥?1N4565AUR-1 THRU 1N4584AUR-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS 1N4565AUR-1 thru 1N4584AUR-1
PER MIL-PRF-19500/452
and
鈥?TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
鈥?LEADLESS PACKAGE FOR SURFACE MOUNT
鈥?LOW CURRENT OPERATING RANGE: 0.5 TO 4.0 mA
鈥?METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS
Operating Temperature: -65掳C to +175掳C
Storage Temperature: -65掳C to +175掳C
DC Power Dissipation: 500mW @ +50掳C
Power Derating: 4 mW / 掳C above +50掳C
CDLL4565 thru CDLL4584A
REVERSE LEAKAGE CURRENT
lR = 2
碌
A @ 25掳C & VR = 3Vdc
ELECTRICAL CHARACTERISTICS
@ 25掳C, unless otherwise speci锟?frac12;ed.
CDI
TYPE
NUMBER
ZENER
TEST
CURRENT
l ZT
EFFECTIVE
TEMPERATURE
COEFFICIENT
VOLTAGE
TEMPERATURE
STABILITY
鲁VZT MAX
-55掳 to + 100掳
(Note 1)
mV
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
TEMPERATURE
RANGE
MAX.DYNAMIC
ZENER
IMPEDANCE
ZZT
(Note 2)
掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
0 to + 75掳C
-55 to + 100掳C
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
25
25
25
25
25
mA
CDLL4565
CDLL4565A
CDLL4566
CDLL4566A
CDLL4567
CDLL4567A
CDLL4568
CDLL4568A
CDLL4569
CDLL4569A
CDLL4570
CDLL4570A
CDLL4571
CDLL4571A
CDLL4572
CDLL4572A
CDLL4573
CDLL4573A
CDLL4574
CDLL4574A
CDLL4575
CDLL4575A
CDLL4576
CDLL4576A
CDLL4577
CDLL4577A
CDLL4578
CDLL4578A
CDLL4579
CDLL4579A
CDLL4580
CDLL4580A
CDLL4581
CDLL4581A
CDLL4582
CDLL4582A
CDLL4583
CDLL4583A
CDLL4584
CDLL4584A
.5
.5
.5
.5
.5
.5
.5
.5
.5
.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
%/掳C
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/掳C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
NOTE 1
The maximum allowable change observed over the entire temperature range
i.e.,the diode voltage will not exceed the speci锟?frac12;ed mV at any discrete
temperature between the established limits, per JEDEC standard No.5.
NOTE 2
Zener impedance is derived by superimposing on l ZT A 60Hz rms a.c. current
equal to 10% of l ZT.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
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