鈥?1N6638US,1N6642US, 1N6643US AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
鈥?1N6638U,1N6642U, 1N6643U AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/578
鈥?SWITCHING DIODES
鈥?NON-CAVITY GLASS PACKAGE
鈥?METALLURGICALLY BONDED
1N6638U & US
1N6642U & US
1N6643U & US
MAXIMUM RATINGS
Operating Temperature: -65掳C to +175掳C
Storage Temperature: -65掳C to +175掳C
Operating Current: 300 mA
Derating: 4.6 mA/掳C Above TEC = + 110掳C
Surge Current: I
FSM
= 2.5A, half sine wave, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS
@ 25掳C, unless otherwise specified.
V BR
TYPES
@ IR
=100 碌A
V RWM
V F1
IFM
=10 mA
(Pulsed)
V (pk)
1N6638U & US
1N6642U & US
1N6643U & US
150
100
75
V (pk)
125
75
50
V dc
0.8
0.8
1.0
V dc
1.1
1.2
1.2
(Pulsed)
mA
200
100
100
V F2
@ I F2
tfr
IF
=50 mA
ns
20
20
20
trr
IR = 10 mA
IF = 10 mA
IREC = 1 mA
ns
4.5
5.0
6.0
DIM
D
F
G
S
MILLIMETERS
MIN
MAX
1.78
2.16
0.48
0.71
4.19
4.95
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH:
Tin / Lead
I R1
TYPES
VR
= 20 V
nA dc
I R2
@V R
= V RWM
碌A dc
I R3
V R = 20 V
TA = 150掳C
碌A dc
I R4
V R = V RWM
TA = 150掳C
碌A dc
C T1
VR=
0V
pF
C T2
VR=
1.5V
pF
THERMAL RESISTANCE: (R
OJEC):
50 掳C/W maximum at L = 0
THERMAL IMPEDANCE: (Z
OJX): 25
掳C/W maximum
POLARITY:
Cathode end is banded.
1N6638U & US
1N6642U & US
1N6643U & US
35
25
50
0.5
0.5
0.5
50
50
75
100
100
160
2.5
5.0
5.0
2.0
2.8
2.8
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / 掳C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
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