K6R4008V1B Datasheet

  • K6R4008V1B

  • CMOS SRAM

  • 216.46KB

  • 10页

  • SAMSUNG   SAMSUNG

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PRELIMINARY
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev No.
Rev. 0.0
Rev. 1.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Item
Previous
I
CC
10ns
170mA
12ns
160mA
15ns
150mA
I
SB
f=max.
40mA
I
SB1
f=0
10 / 1mA
I
DR
V
DR
=3.0V
0.9mA
Draft Data
Jan. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Rev. 2.0
Feb.11th.1998
Final
Current
205mA
200mA
195mA
50mA
10 / 1.2mA
1.0mA
Jun.27th 1998
Final
Rev. 2.1
Change operating current at Industrial Temperature range.
Previous spec.
Changed spec.
Items
(10/12/15ns part)
(10/12/15ns part)
Icc
205/200/195mA
230/225/220mA
Add 44 pins plastic TSOP(II) forward Package.
Rev. 2.2
May. 4th 1999
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.2
May 1999

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