鈥?/div>
High speed Switching
Suitable for Switching Regulator Motor Control
Straight Lead (I.PACK, I Suffix)
Lead Formed for Surface Mount Applications (No Suffix)
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25掳C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25掳C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
1.5
3
0.75
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
掳C
掳C
Electrical Characteristics
T
C
=25掳C unless otherwise noted
Symbol
V
CEO
(sus)
I
EBO
h
FE
V
CE
(sat)
Parameter
* Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
Test Condition
I
C
= 5mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V, f = 0.1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
= 125V, I
C
= 1A
I
B
1 = 0.2A, I
B
2 = - 0.2A
4
1.1
4.0
0.7
21
8
5
Min.
400
Typ.
Max.
10
40
0.5
1
3
1
1.2
V
V
V
V
V
pF
MHz
碌s
碌s
碌s
Units
V
碌A
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON time
Storage time
Fall Time
* Pulse Test: Pulse Width=5ms, Duty Cycle鈮?0%
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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