KSP10
KSP10
VHF/UHF transistor
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
P
C
P
C
T
J
T
STG
Rth(j-c)
Rth(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation (T
a
=25掳C)
Derate above 25掳C
Collector Power Dissipation (T
C
=25掳C)
Derate above 25掳C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Value
30
25
3.0
350
2.8
1.0
8.0
150
-55~150
125
357
Units
V
V
V
mW
mW/掳C
W
W/掳C
掳C
掳C
掳C/W
掳C/W
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
C
rb
C
c路rbb麓
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector Base Feedback Capacitance
Collector Base Time Constant
Test Condition
I
C
=100碌A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10碌A, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=10V, I
C
=4mA
I
C
=4mA, I
B
=0.4mA
V
CE
=10V, I
C
=4mA
V
CE
=10V, I
C
=4mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=4mA,
f=31.8MHz
0.35
650
0.7
0.65
9.0
60
0.5
0.95
V
V
MHz
pF
pF
ps
Min.
30
25
3.0
100
100
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1
2
3
4
5
