KSP25/26/27
KSP25/26/27
Darlington Transistor
鈥?Collector-Emitter Voltage: V
CES
=KSP25: 40V
KSP26: 50V
KSP27: 60V
鈥?Collector Power Dissipation: P
C
(max) =625mW
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CES
Collector-Emitter Voltage
: KSP25
: KSP26
: KSP27
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
40
50
60
10
500
625
150
-55~150
V
V
V
V
mA
mW
掳C
掳C
Parameter
Value
Units
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CES
Parameter
Collector-Emitter Breakdown Voltage
: KSP25
: KSP26
: KSP27
Collector-Base Breakdown Voltage
: KSP25
: KSP26
: KSP27
Collector Cut-off Current
: KSP25
: KSP26
: KSP27
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
V
CE
=30V, I
E
=0
V
CE
=40V, I
E
=0
V
CE
=50V, I
E
=0
V
EB
=10V, I
B
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
10K
10K
1.5
2
V
V
100
100
100
100
nA
nA
nA
nA
Test Condition
I
C
=100碌A, I
E
=0
Min.
40
50
60
I
C
=100碌A, I
E
=0
40
50
60
V
V
V
Max.
Units
V
V
V
BV
CBO
I
CBO
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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