KSP75/76/77
KSP75/76/77
Darlington Transistor
鈥?Collector-Emitter Voltage: V
CES
= KSP75: 40V
KSP76: 50V
KSP77: 60V
鈥?Collector Power Dissipation: P
C
(max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CES
Collector-Base Voltage
: KSP75
: KSP76
: KSP77
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-40
-50
-60
-10
-500
625
150
-55~150
V
V
V
V
mA
mW
掳C
掳C
Parameter
Value
Units
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
I
EBO
I
CES
Emitter Cut-off Current
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
h
FE
V
CE
(sat)
V
BE
(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
CE
= -30V, I
E
=0
V
CE
= -40V, I
E
=0
V
CE
= -50V, I
E
=0
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
I
C
= -100mA, I
B
= -0.1mA
V
CE
= -5V, I
C
= -100mA
10K
10K
-1.5
2
V
V
-500
-500
-500
nA
nA
nA
V
CE
= -30V, I
E
=0
V
CE
= -40V, I
E
=0
V
CE
= -50V, I
E
=0
V
CE
= -10V, I
B
=0
-100
-100
-100
-100
Test Condition
I
C
= -100碌A, I
B
=0
Min.
-40
-50
-60
I
C
= -100碌A, I
E
=0
-40
-50
-60
V
V
V
nA
nA
nA
nA
nA
Max.
Units
V
V
V
BV
CBO
I
CBO
漏2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
1
2
3
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