KSP92/93
KSP92/93
High Voltage Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP92
: KSP93
V
CEO
Collector-Emitter Voltage
: KSP92
: KSP93
V
EBO
I
C
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T
a
=25掳C)
Derate above 25掳C
Collector Power Dissipation (T
C
=25掳C)
Derate above 25掳C
Junction Temperature
Storage Temperature
-300
-200
-5
-500
625
5
1.5
12
150
-55 ~ 150
V
V
V
mA
mW
mW/掳C
W
mW/掳C
掳C
掳C
-300
-200
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KSP92
: KSP93
* Collector-Emitter Breakdown Voltage
: KSP92
: KSP93
Emitter-Base Breakdown Voltage
Collector Cur-off Current
: KSP92
: KSP93
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
V
CB
= -200V, I
E
=0
V
CB
= -160V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
= -20V, I
C
= -10mA, f=100MHz
V
CB
= -20V, I
E
=0
f=1MHz
50
6
8
25
40
25
-0.50
-0.90
V
V
MHz
pF
pF
-0.25
-0.25
-0.10
碌A
碌A
碌A
Test Condition
I
C
= -100碌A, I
E
=0
Min.
-300
-200
I
C
= -1mA, I
B
=0
-300
-200
I
E
= -100碌A, I
C
=0
-5
V
V
V
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
*Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
: KSP92
: KSP93
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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