KSP94
KSP94
High Voltage Transistor
鈥?High Collector-Emitter Voltage: V
CEO
= -400V
鈥?Low Collector-Emitter Saturation Voltage
鈥?Complement to KSP44
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-400
-400
-6
-300
625
150
-55~150
Units
V
V
V
mA
mW
掳C
掳C
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
CES
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
V
CE
(sat)
1
V
CE
(sat)
2
V
BE
(sat)
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -100碌A, I
E
=0
I
C
= -100碌A, V
BE
=0
I
E
= -10碌A, I
C
=0
V
CB
= -300V, V
E
=0
V
CE
= -400V, V
BE
=0V
V
BE
= -4V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
V
CB
= -20V, I
E
=0, f=1MHz
7
40
50
45
40
Min.
-400
-400
-6
-100
-1
-100
300
Typ.
Max.
Units
V
V
V
nA
碌A
nA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
-500
-750
-750
mV
mV
mV
pF
漏2002 Fairchild Semiconductor Corporation
Rev. A2, July 2002
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