KST13/14
KST13/14
Darlington Amplifier Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
30
30
10
300
350
150
Units
V
V
V
mA
mW
掳C
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CES
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KST13
: KST14
: KST13
: KST14
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
f=100MHz
125
5K
10K
10K
20K
1.5
2.0
V
V
MHz
Test Condition
I
C
=100碌A, V
BE
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
Min.
30
Max.
100
100
Units
V
nA
nA
Marking Code
Type
Mark
KST13
1M
Marking
KST14
1N
1M
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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