1. Base 2. Emitter 3. Collector
鈥?/div>
Refer to KSP24 for graphs
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
f
T
C
ob
G
G
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
* Current Gain Bandwidth Product
Output Capacitance
Conversion Gain (213MHz to 45MHz)
(60MHz to 45MHz)
Test Condition
I
C
=100碌A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10碌A, I
C
=0
V
CB
=15V, I
E
=0
V
CE
=10V, I
C
=8mA
V
CE
=10V, I
C
=8mA
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=8mA, V
CC
=20V
Oscillator Injection=150mV
19
24
30
400
620
0.25
24
29
0.36
MHz
pF
dB
dB
Min.
40
30
4
50
Typ.
Max.
Units
V
V
V
nA
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking
3A
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
