KST42/43
KST42/43
High Voltage Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
Parameter
Collector Base Voltage
: KST42
: KST43
V
CEO
Collector-Emitter Voltage
: KST42
: KST43
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
300
200
6
500
350
150
357
V
V
V
mA
mW
掳C
掳C/W
300
200
V
V
Value
Units
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Emitter Breakdown Voltage
: KST42
: KST43
* Collector -Emitter Breakdown Voltage
: KST42
: KST43
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
=100碌A, I
E
=0
Min.
300
200
I
C
=1mA, I
B
=0
300
200
I
E
=100碌A, I
C
=0
V
CB
=200V, I
E
=0
V
CB
=5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CB
=20V, I
E
=0
f=1MHz
V
CE
=20V, I
C
=10mA
f=100MHz
50
25
40
40
0.5
0.9
3
4
V
V
pF
pF
MHz
6
0.1
0.1
V
V
V
碌A
碌A
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KST42
: KST43
f
T
Current Gain Bandwidth Product
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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