KST5086/5087
KST5086/5087
Low Noise Transistor
3
2
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
1
SOT-23
1. Base 2. Emitter 3. Collector
Value
-50
-50
-3
-50
350
150
Units
V
V
V
mA
mW
掳C
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: KST5086
: KST5087
: KST5086
: KST5087
: KST5086
: KST5087
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: KST5086
: KST5087
: KST5087
I
C
= -100碌A, V
CE
= -5V
R
S
=3K鈩? f=1KHz
V
CE
= -5V, I
C
= -20mA
R
S
=10K鈩? f=10Hz to 15.7KHz
3
2
2
dB
dB
dB
V
CE
= -5V, I
C
= -100碌A
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CE
= -5V, I
C
= -500碌A
f=20MHz
V
CB
= -5V, I
E
=0
f=100MHz
40
4
150
250
150
250
150
250
500
800
Test Condition
I
C
= -100碌A, I
E
=0
I
C
= -1mA, I
B
=0
V
CB
= -20V, I
E
=0
Min.
-50
-50
-50
Max.
Units
V
V
nA
-0.3
-0.85
V
V
MHz
pF
Marking Code
Type
Mark
KST5086
2P
KST5087
2Q
Marking
2P
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
4
