KST5088/5089
KST5088/5089
Low Noise Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KST5088
: KST5089
V
CEO
Collector-Emitter Voltage
: KST5088
: KST5089
V
EBO
I
C
P
C
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
30
25
4.5
50
350
150
V
V
V
mA
mW
掳C
35
30
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KST5088
: KST5089
Collector-Emitter Breakdown Voltage
: KST5088
: KST5089
Collector Cut-off Current
: KST5088
: KST5089
Emitter Cut-off Current
DC Current Gain
: KST5088
: KST5089
: KST5088
: KST5089
: KST5088
: KST5089
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
: KST5088
: KST5089
I
C
=100碌A, V
CE
=5V
R
S
=10K鈩? f=10Hz to 15.7KHz
3
2
dB
dB
V
CE
=5V, I
C
=100碌A
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=5V, I
C
=500碌A, f=20MHz
V
CB
=5V, I
E
=0, f=100KHz
50
4
300
400
350
450
300
400
900
1,200
Test Condition
I
C
=100碌A, I
E
=0
Min.
35
30
I
C
=1mA, I
B
=0
30
25
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
V
EB
=3V, I
C
=0
50
50
50
V
V
nA
nA
nA
Max.
Units
V
V
BV
CEO
I
CBO
I
EBO
h
FE
0.5
0.8
V
V
MHz
pF
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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