KST5401
KST5401
High Voltage Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
-160
-150
-5
-500
350
150
Units
V
V
V
mA
mW
掳C
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Test Condition
I
C
= -100碌A, I
E
=0
I
C
= -1.0mA, I
B
=0
I
E
= -10碌A, I
C
=0
V
CB
= -100V, I
E
=0
V
CE
= -5V, I
C
= -1.0mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -50mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, V
CE
= -10V
f=100MHz
V
CB
= -10V, I
E
=0, f=1.0MHz
V
CE
= -5V, I
C
= -200碌A
R
S
=10K鈩? f=10Hz to 15.7KHz
100
50
60
50
Min.
-160
-150
-5
-50
240
-0.2
-0.5
-1.0
-1.0
300
6.0
8.0
V
V
V
V
MHz
pF
dB
Max.
Units
V
V
V
nA
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Marking
2L
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
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