KST63/64
KST63/64
Darlington Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
Value
-30
-30
-10
-500
350
150
Units
V
V
V
mA
mW
掳C
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CES
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KST63
: KST64
: KST63
: K ST64
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
I
C
= -100mA, I
B
= -0.1mA
V
CE
= -5V, I
C
= -100mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
125
5K
10K
10K
20K
-1.5
-2.0
V
V
MHz
Test Condition
I
C
= -100, V
BE
=0
V
CE
= -30V, I
E
=0
V
EB
= -10V, I
C
=0
Min.
-30
Max.
-100
-100
Units
V
nA
nA
* Pulse test: PW鈮?00碌s, Duty Cycle鈮?%
Marking Code
Type
Mark
KST63
2U
KST64
2V
Marking
2U
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
4
