1. Base 2. Emitter 3. Collector
鈥?/div>
Refer to KSP92/93 for graphs
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KST92
: KST93
* Collector-Emitter Breakdown Voltage
: KST92
: KST93
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST92
: KST93
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100碌A, I
E
=0
Min.
-300
-200
I
C
= -1mA, I
B
=0
-300
-200
I
E
= -100碌A, I
C
=0
V
CB
= -200V, I
E
=0
V
CB
= -160V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CB
= -20V, I
E
=0
f=1MHz
V
CE
= -20V, I
C
= -10mA
f=100MHz
50
25
40
25
-0.5
-0.9
6
8
V
V
pF
pF
MHz
-5
-0.25
-0.25
-0.1
V
V
V
碌A
碌A
碌A
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KST92
: KST93
f
T
Current Gain Bandwidth Product
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2003 Fairchild Semiconductor Corporation
Rev. B2, January 2003
1
2
3
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