SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3600S
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S
21e
|
2
=13dB (f=1GHz).
D
L
E
B
L
2
A
G
H
1
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
20
10
1.5
40
150
150
-55 150
UNIT
P
P
V
V
V
mA
mW
C
N
J
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
K
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
h
FE
Rank
Lot No.
Type Name
R
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
|S
21e
|
2
(2)
NF (1)
Noise Figure
NF (2)
V
CE
=8V, I
C
=5mA, f=2GHz
-
1.7
-
dB
Note 1 : h
FE
Classification
H:50~100, J:80~160, K:125~250
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
V
CE
=8V, I
C
=20mA, f=2GHz
V
CE
=8V, I
C
=5mA, f=1GHz
-
-
7
1.1
-
2.5
dB
dB
SYMBOL
I
CBO
I
EBO
h
FE
(Note1)
C
ob
V
CB
=10V, I
E
=0, f=1MHz (Note2)
C
re
f
T
|S
21e
|
2
(1)
V
CE
=8V, I
C
=20mA
V
CE
=8V, I
C
=20mA, f=1GHz
-
7
10
0.5
10
13
0.95
-
-
pF
GHz
dB
TEST CONDITION
V
CB
=10V, I
E
=0
V
EB
=1V, I
C
=0
V
CE
=8V, I
C
=20mA
MIN.
-
-
50
-
TYP.
-
-
-
0.7
MAX.
1
1
250
-
pF
UNIT
A
A
2007. 8. 22
Revision No : 0
1/5
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