SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
KTK161
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
B
FEATURES
Low Noise Figure.
High Forward Transfer Admittance.
:|y
fs
|= 9mS(Typ.).
Extremely Low Reverse Transfer Capacitance.
: C
rss
=0.1pF(Typ.)
C
H
M
F
: NF=2.5dB(Typ.) (f=100MHz).
A
O
E
E
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Gate-Drain Voltage
Gate-Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
GDO
I
G
P
D
T
j
T
stg
RATING
-18
10
400
150
-55
150
UNIT
V
mA
mW
1
L
2
3
N
DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_
D
2.40 + 0.15
E
1.27
F
2.30
_
G
14.00+ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
J
1. DRAIN
2. SOURCE
3. GATE
K
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Gate Leakage Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-off Voltage
Foward Transfer Admittance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Note : I
DSS
Classification
O:1.0 3.0,
Y:2.5
SYMBOL
I
GSS
V
(BR)GDO
I
DSS
(Note)
V
GS(OFF)
|y
fs
|
C
rss
G
ps
NF
6.0,
TEST CONDITION
V
GS
=-0.5V, V
DS
=0
I
G
=-100 A
V
DS
=10V, V
GS
=0V
V
DS
=10V, I
D
=1 A
V
DS
=10V, V
GS
=0, f=1kHz
V
GD
=-10V, f=1MHz
V
DD
=10V, f=100MHz (Fig.)
V
DD
=10V, f=100MHz (Fig.)
GR:5.0 10.0,
BL:9.0 15.0
MIN.
-
-18
1.0
-0.4
-
-
-
-
TYP.
-
-
-
-
9.0
0.10
18
2.5
MAX.
-10
-
15.0
-4.0
-
0.15
-
3.5
UNIT
nA
V
mA
V
mS
pF
dB
dB
1995. 1. 24
Revision No : 0
D
G
TO-92M
1/3
1
2
3
