DSEP 8-06A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 10 A
V
RRM
= 600 V
t
rr
= 35 ns
A
C
V
RSM
V
600
V
RRM
V
Type
TO-220 AC
C
600
DSEP 8-06A
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 135掳C; rectangular, d = 0.5
T
VJ
= 45掳C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25掳C; non-repetitive
I
AS
= 0.9 A; L = 180 碌H
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
35
10
50
0.1
0.1
-55...+175
175
-55...+150
A
A
Features
A
q
mJ
A
掳C
掳C
掳C
W
Nm
g
q
q
q
q
q
q
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
T
C
= 25掳C
mounting torque
typical
60
0.4...0.6
2
Applications
q
q
q
Symbol
I
R
x
Conditions
T
VJ
= 25掳C V
R
= V
RRM
T
VJ
= 150掳C V
R
= V
RRM
I
F
= 10 A;
T
VJ
= 150掳C
T
VJ
= 25掳C
Characteristic Values
typ.
max.
60
0.25
1.42
2.10
2.5
0.5
mA
mA
V
V
K/W
K/W
ns
q
q
q
q
q
V
F
y
R
thJC
R
thCH
t
rr
I
RM
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
q
I
F
= 1 A; -di/dt = 50 A/ms;
V
R
= 30 V; T
VJ
= 25掳C
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/ms
T
VJ
= 100掳C
35
4.4
A
q
q
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
ms,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see outlines.pdf
漏 2000 IXYS All rights reserved
1-2
008
IXYS reserves the right to change limits, test conditions and dimensions.
1
2
