LRC
LESHAN RADIO COMPANY,LTD.
High-Frequency Amplifier
Transistor
L2SC4083QWT1
3
COLLECTOR
3
1
BASE
1
2
EMITTER
2
SC-70/SOT-323
Absolute maximum ratings
(Ta=25
o
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Limits
20
11
3
50
0.2
150
- 55~+150
Unit
V
V
V
mA
W
o
o
C
C
Driver Marking
L2SC4083QWT1=4Q
Electrical characteristics
(Ta=25
o
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
120
1.4
3.2
0.8
Min.
20
11
3
0.5
0.5
0.5
270
1.5
Typ.
Max.
Unit
V
V
V
uA
uA
V
GHz
pF
I
C
=
10
碌A
I
C
=
1mA
I
E
=
10
碌A
V
CB
=
10V
V
EB
=
2V
I
C
/I
B
=
10mA/5mA
V
CE
/I
C
=
10V/5mA
V
CB
=
10V , I
C
=
10mA , f
=
500MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
V
CB
=
10V , I
C
=
10mA , f
=
31.8MHz
V
CE
=
6V
, I
C
=
2mA , f
=
500MHz
, Rg
=
50鈩?/div>
Conditions
rbb'路Cc
NF
4
3.5
12
ps
dB
1/2
1
2
