L356 Datasheet

  • L356

  • HiPerDynFRED Epitaxial Diode with soft recovery

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  • IXYS   IXYS

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DSEP 9-06CR
HiPerDynFRED
TM
Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
I
FAV
= 9 A
V
RRM
= 600 V
t
rr
= 15 ns
V
RSM
V
600
V
RRM
V
600
Type
A
C
ISOPLUS 247
TM
C
A
Isolated back surface *
DSEP 9-06CR
A = Anode, C = Cathode
* Patent pending
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 140掳C; rectangular, d = 0.5
t
P
< 10 碌s; rep. rating, pulse width limited by T
VJM
T
VJ
= 45掳C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25掳C; non-repetitive
I
AS
= 2 A; L = 180 碌H
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
50
9
tbd
80
0.5
0.2
-55...+175
175
-55...+150
A
A
A
A
mJ
A
掳C
掳C
掳C
W
V~
N
g
Features
鈥?Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
鈥?Low cathode to tab capacitance (< 25 pF)
鈥?International standard package
鈥?Planar passivated chips
鈥?Very short recovery time
鈥?Extremely low switching losses
鈥?Low I
RM
-values
鈥?Soft recovery behaviour
鈥?Epoxy meets UL 94V-0
鈥?Isolated and UL registered E153432
Applications
鈥?Antiparallel diode for high frequency
switching devices
鈥?Antisaturation diode
鈥?Snubber diode
鈥?Free wheeling diode in converters
and motor control circuits
鈥?Rectifiers in switch mode power
supplies (SMPS)
鈥?Inductive heating
鈥?Uninterruptible power supplies (UPS)
鈥?Ultrasonic cleaners and welders
Advantages
鈥?Avalanche voltage rated for reliable
operation
鈥?Soft reverse recovery for low EMI/RFI
鈥?Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
T
C
= 25掳C
50/60 Hz RMS; I
ISOL
鈮?/div>
1 mA
mounting force with clip
typical
150
2500
20...120
6
Symbol
I
R
鈶?/div>
Conditions
T
VJ
= 25掳C V
R
= V
RRM
T
VJ
= 150掳C V
R
= V
RRM
I
F
= 9 A;
T
VJ
= 150掳C
T
VJ
= 25掳C
Characteristic Values
typ.
max.
50
0.2
2.9
4.0
1
0.25
碌A
mA
V
V
K/W
K/W
ns
4.1
A
V
F
鈶?/div>
R
thJC
R
thCH
t
rr
I
RM
I
F
= 1 A; -di/dt = 200 A/碌s;
V
R
= 30 V; T
VJ
= 25掳C
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/碌s
T
VJ
= 100掳C
15
3.5
Pulse test:
鈶?/div>
Pulse Width = 5 ms, Duty Cycle < 2.0 %
鈶?/div>
Pulse Width = 300 碌s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
1-2

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