pable of operating with supply voltages up to 100V. The 鈥淎鈥?/div>
versions provide a full 3A of gate drive while the 鈥淏鈥?and 鈥淐鈥?/div>
versions provide 2A and 1A respectively. The outputs are
independently controlled with CMOS input thresholds
(LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An
integrated high voltage diode is provided to charge the high-
side gate drive bootstrap capacitor. A robust level shifter
operates at high speed while consuming low power and
providing clean level transitions from the control logic to the
high-side gate driver. Under-voltage lockout is provided on
both the low-side and the high-side power rails. These de-
vices are available in the standard SOIC - 8 pin and the LLP
- 10 pin packages.
Features
n
Drives both a high-side and low-side N-Channel
MOSFETs
n
Independent high and low driver logic inputs
n
Bootstrap supply voltage up to 118V DC
n
Fast propagation times (25 ns typical)
n
Drives 1000 pF load with 8 ns rise and fall times
n
Excellent propagation delay matching (3 ns typical)
n
Supply rail under-voltage lockout
n
Low power consumption
n
Pin compatible with HIP2100/HIP2101
Typical Applications
n
n
n
n
n
Current Fed push-pull converters
Half and Full Bridge power converters
Synchronous buck converters
Two switch forward power converters
Forward with Active Clamp converters
Package
n
SOIC-8
n
LLP-10 (4 mm x 4 mm)
Simplified Block Diagram
20203103
FIGURE 1.
漏 2006 National Semiconductor Corporation
DS202031
www.national.com