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LMC660AIMX Datasheet

  • LMC660AIMX

  • National Semiconductor [CMOS Quad Operational Amplifier]

  • 873.57KB

  • NSC

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LMC660 CMOS Quad Operational Amplifier
August 2000
LMC660
CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It operates from +5V to +15V
and features rail-to-rail output swing in addition to an input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiers in the past
are not a problem with this design. Input V
OS
, drift, and
broadband noise as well as voltage gain into realistic loads
(2 k鈩?and 600鈩? are all equal to or better than widely ac-
cepted bipolar equivalents.
This chip is built with National鈥檚 advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational
amplifier with these same features.
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Ultra low input bias current: 2 fA
Input common-mode range includes V
鈭?/div>
Operating range from +5V to +15V supply
I
SS
= 375 碌A/amplifier; independent of V
+
Low distortion: 0.01% at 10 kHz
Slew rate: 1.1 V/碌s
Available in extended temperature range (鈭?0藲C to
+125藲C); ideal for automotive applications
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Available to Standard Military Drawing specification
Applications
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High-impedance buffer or preamplifier
Precision current-to-voltage converter
Long-term integrator
Sample-and-Hold circuit
Peak detector
Medical instrumentation
Industrial controls
Automotive sensors
Features
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Rail-to-rail output swing
Specified for 2 k鈩?and 600鈩?loads
High voltage gain: 126 dB
Low input offset voltage: 3 mV
Low offset voltage drift: 1.3 碌V/藲C
Connection Diagram
14-Pin DIP/SO
LMC660 Circuit Topology (Each Amplifier)
DS008767-4
DS008767-1
漏 2000 National Semiconductor Corporation
DS008767
www.national.com

LMC660AIMX 产品属性

  • National Semiconductor (TI)

  • 4

  • 70 dB

  • 3 mV at 5 V

  • 5 V, 9 V, 12 V, 15 V

  • SMD/SMT

  • SOIC-14 Narrow

  • 1.1 V/us at 5 V

  • No

  • + 85 C

  • Reel

  • - 40 C

  • 2500

  • 2.2 mA at 5 V

  • 15.5 V

  • 4.75 V

  • CMOS

  • 126.02 dB

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