LESHAN RADIO COMPANY, LTD.
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the SC-
59 package which is designed for low power surface mount applications.
鈥?/div>
Fast t rr , < 3.0 ns
鈥?/div>
Low C
D
, < 2.0 pF
鈥?/div>
Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
3
M1MA151KT1
M1MA152KT1
SC-59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
2
1
CASE 318D鈥?3, STYLE2
2
1
ANODE NO CONNECTION
SC鈥?9
MAXIMUM RATINGS
(T
A
= 25掳C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
M1MA151KT1
M1MA152KT1
M1MA151KT1
M1MA152KT1
I
F
I
FM
I
FSM
(1)
Symbol
V
R
V
RM
Value
40
80
40
80
100
225
500
lMax
200
150
-55 to +150
Min
鈥?/div>
鈥?/div>
鈥?/div>
40
80
鈥?/div>
鈥?/div>
Max
0.1
0.1
1.2
鈥?/div>
鈥?/div>
2.0
3.0
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
Unit
mW
掳C
掳C
Unit
碌Adc
Vdc
Vdc
pF
ns
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbo
P
D
T
J
T
stg
Symbol
I
R
V
F
V
R
C
D
t
rr (2)
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
碌A
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100鈩? I
rr
= 0.1 I
R
ELECTRICAL CHARACTERISTICS
(T
A
= 25掳C)
Characteristic
Reverse Voltage Leakage Current M1MA151KT1
M1MA152KT1
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
2. t
rr
Test Circuit
M1MA151KT1
M1MA152KT1
H2鈥?/2
M1MA151KT1 产品属性
3,000
分离式半导体产品
单二极管/整流器
-
标准
40V
100mA（DC）
1.2V @ 100mA
小信号 =
3ns
100nA @ 35V
2pF @ 0V，1MHz
表面贴装
TO-236-3，SC-59，SOT-23-3
SC-59
带卷 (TR)
M1MA151KT1相关型号PDF文件下载
-
型号
版本
描述
厂商
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