LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching diodes
These Common Cathode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC-59 package which is designed for low
power surface mount applications.
鈥?/div>
Fast t
rr
, < 3.0 ns
鈥?/div>
Low C
D
, < 2.0 pF
鈥?/div>
Available in 8 mm Tape and Reel
Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
M1MA151WKT1
M1MA152WKT1
SC-59 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
2
1
2
ANODE
1
CASE
318D鈥?3, STYLE3
SC鈥?9
MAXIMUM RATINGS
(T
A
= 25掳C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
M1MA151WAT1
V
R
M1MA152WAT1
M1MA151WAT1
M1MA152WAT1
Single
Dual
Single
Dual
Single
Dual
V
RM
I
F
I
FM
I
FSM (1)
Value
40
80
40
80
100
150
225
340
500
750
Symbo
P
D
T
J
T
stg
lMax
200
150
-55 to +150
Unit
mW
掳C
掳C
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
碌A
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100鈩? I
rr
= 0.1 I
R
Min
鈥?/div>
鈥?/div>
鈥?/div>
40
80
鈥?/div>
鈥?/div>
Max
0.1
0.1
1.2
鈥?/div>
鈥?/div>
2.0
3.0
Unit
碌Adc
Vdc
Vdc
pF
ns
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(T
A
= 25掳C)
Characteristic
Reverse Voltage Leakage Current M1MA151WAT1
M1MA152WAT1
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
2. t
rr
Test Circuit
M1MA151WAT1
M1MA152WAT1
C
D
t
rr (2)
V
F
V
R
Symbol
I
R
H4鈥?/2
M1MA152WKT1 产品属性
ON Semiconductor
发光二极管（通用、电源、转换）
Switching Diodes
80 V
0.34 A
0.75 A
Dual Common Cathode
3 ns
1.2 V
0.1 uA
0.2 W
+ 150 C
SC-59-3
Reel
+ 150 C
- 55 C
SMD/SMT
3000
M1MA152WKT1相关型号PDF文件下载
-
型号
版本
描述
厂商
下载
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