M1MA174T1
Preferred Device
Silicon Switching Diode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10
碌s
Total Power Dissipation,
One Diode Loaded
TA = 25掳C
Derate above 25掳C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
Symbol
VR
IF
IFM(surge)
PD
Value
100
200
500
200
Unit
V
mA
mA
mW
3
CATHODE
1
ANODE
http://onsemi.com
1.6
mW/掳C
3
TJ, Tstg
鈥?5 to
+150
掳C
1
2
SC鈥?0/SOT鈥?23
CASE 419
STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
R
胃JA
Max
0.625
Unit
掳C/mW
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
(TA = 25掳C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 100
碌Adc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
Symbol
V(BR)
IR
鈥?/div>
鈥?/div>
CT
VF
trr
鈥?/div>
鈥?/div>
鈥?/div>
25
5.0
4.0
1.0
4.0
nAdc
碌Adc
pF
Vdc
ns
Min
100
Max
鈥?/div>
Unit
Vdc
J6
M
J6 M
= Device Code
= Date Code
ORDERING INFORMATION
Device
M1MA174T1
Package
SC鈥?0
Shipping
3000/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 1
Publication Order Number:
M1MA174T1/D
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