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MAC4DLM

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

Features

http://onsemi.com

鈥?/div>

Small Size Surface Mount DPAK Package

Passivated Die for Reliability and Uniformity

Four鈭扱uadrant Triggering

Blocking Voltage to 600 V

On鈭扴tate Current Rating of 4.0 Amperes RMS at 93掳C

Low Level Triggering and Holding Characteristics

Epoxy Meets UL 94, V鈭? @ 0.125 in

ESD Ratings: Human Body Model, 3B

u

8000 V

Machine Model, C

u

400 V

TRIACS

4.0 AMPERES RMS

600 VOLTS

MT2

G

MT1

MARKING

DIAGRAMS

Unit

V

1 2

3

4

DPAK

CASE 369C

STYLE 6

MAXIMUM RATINGS

(T

J

= 25掳C unless otherwise noted)

Rating

Peak Repetitive Off鈭扴tate Voltage (Note 1)

(T

J

= 鈭?0 to 110掳C, Sine Wave,

50 to 60 Hz, Gate Open)

On鈭扴tate RMS Current

(Full Cycle Sine Wave, 60 Hz,

T

C

= 93掳C)

Peak Non-Repetitive Surge Current

(One Full Cycle, 60 Hz, T

J

= 110掳C)

Circuit Fusing Consideration

(t = 8.3 msec)

Peak Gate Power

(Pulse Width

鈮?/div>

10

msec,

T

C

= 93掳C)

Average Gate Power

(t = 8.3 msec, T

C

= 93掳C)

Peak Gate Current

(Pulse Width

鈮?/div>

10

msec,

T

C

= 93掳C)

Peak Gate Voltage

(Pulse Width

鈮?/div>

10

msec,

T

C

= 93掳C)

Operating Junction Temperature Range

Storage Temperature Range

Symbol

V

DRM,

V

RRM

I

T(RMS)

Value

600

YWW

AC

4DLM

4.0

A

4

I

TSM

I

2

t

P

GM

P

G(AV)

I

GM

V

GM

T

J

T

stg

40

6.6

0.5

0.1

0.2

5.0

鈭?0 to

110

鈭?0 to

150

A

2

sec

W

1

2

3

DPAK鈭?

CASE 369D

STYLE 6

YWW

AC

4DLM

Y

WW

= Year

= Work Week

PIN ASSIGNMENT

A

V

掳C

1

2

3

4

Main Terminal 1

Main Terminal 2

Gate

Main Terminal 2

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred

devices are recommended choices for future use

and best overall value.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

漏

Semiconductor Components Industries, LLC, 2004

1

August, 2004 鈭?Rev. 2

Publication Order Number:

MAC4DLM/D

制造商
ON Semiconductor
产品种类
双向可控硅
额定重复关闭状态电压 VDRM
600 V
最大转折电流 IBO
40 A
关闭状态漏泄电流（在 VDRM IDRM 下）
0.01 mA
栅触发电压 (Vgt)
1.3 V
栅触发电流 (Igt)
5 mA
保持电流（Ih 最大值）
15 mA
正向电压下降
1.6 V
安装风格
SMD/SMT
封装 / 箱体
DPAK-3
封装
Reel
最大工作温度
+ 110 C
最小工作温度
- 40 C
重复峰值正向闭塞电压
600 V
工厂包装数量
2500

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