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~
~
2
0.275(7)MAX
0.067(1.7)
0.057(1.3)
0.051(1.3)
0.035(0.9)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.057(1.3)
C0.02(0.5)
SOIC-4
Polarity symbols molded
or marking on body
0.031(0.8)
0.0191(0.5)
0.106(2.7)
0.09(2.3)
0.193(4.9)
0.177(4.5)
0.014(0.35)
0.006(0.15)
0.043(1.1)
0.027(0.7)
Dimensions are in:
inches (mm)
0.5 Ampere Glass Passivated Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
qJA
R
qJL
T
stg
T
J
T
A
= 25掳C unless otherwise noted
Parameter
Average Rectified Current
@ T
A
= 50掳C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25掳C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Tem perature Range
Operating Junction Tem perature
Value
0.5
Units
A
35
1.4
11
85
20
-55 to +150
-55 to +150
A
W
mW/掳C
掳C/W
掳C/W
掳C
掳C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.
Electrical Characteristics
Parameter
T
A
= 25掳C unless otherwise noted
Device
1S
2S
200
140
200
4S
400
280
400
5.0
0.5
1.0
5.0
13
6S
600
420
600
8S
800
560
800
100
70
100
Units
V
V
V
mA
mA
V
2
At
pF
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Maximum Reverse Leakage,
per leg @ rated V
R
T
A
= 25掳C
T
A
= 125掳C
Maximum Forward Voltage Drop,
per bridge
@ 0.5 A
2
I t rating for fusing
t < 8.3 ms
Typi cal Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
茫1999
Fairchild Semiconductor Corporation
MB1S-MB8S, Rev. A
1
2
3
