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High temperature soldering guaranteed:
250掳C/10 seconds, 0.25" (6.35mm) from case
FEATURES
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
MECHANICAL DATA
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
PIN 1
0.205 (5.20)
0.195 (4.95)
PIN 2
CASE
Dimensions in inches and (millimeters)
Case:
JEDEC TO-220AC molded plastic body
Terminals:
Lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
5 in. - lbs. max.
Weight:
0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25掳C ambient temperature unless otherwise specified.
SYMBOLS
MBR735
MBR745
MBR750
MBR760
UNITS
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(SEE FIG 1)
V
RRM
V
RWM
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
35
35
35
45
45
45
7.5
15.0
150.0
1.0
-
0.57
0.84
0.72
0.1
15.0
10,000
3.0
60.0
50
50
50
60
60
60
Volts
Volts
Volts
Amps
Amps
Amps
Peak repetitive forward current (square wave, 20 KH
Z
)
at T
C
=105掳C
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current
Maximum instantaneous
forward voltage at
(NOTE 2)
(NOTE 1)
0.5
0.75
0.65
-
-
0.5
50
Amps
I
F
=7.5A, T
C
=25掳C
I
F
=7.5A, T
C
=125掳C
I
F
=15A, T
C
=25掳C
I
F
=15A, T
C
=125掳C
V
F
Volts
Maximum instantaneous reverse current at
rated DC blocking voltage
T
C
=25掳C
T
C
=125掳C
(NOTE 1)
Voltage rate of change (rated V
R
)
Maximum thermal resistance,
(NOTE 3)
Operating junction temperature range
Storage temperature range
I
R
dv/dt
R
螛JC
R
螛JA
T
J
T
STG
mA
V/碌s
掳C/W
掳C
掳C
-65 to +150
-65 to +175
NOTES:
(1) 2.0碌s, pulse width, f=1.0 KH
Z
(2) Pulse test: 300碌s pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient
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