MWI 50-12 E7
MKI 50-12 E7
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13
1
2
5
6
9
10
16
15
14
3
4
17
11
12
13
1
2
9
10
16
14
I
C25
= 90 A
= 1200 V
V
CES
V
CE(sat) typ.
= 1.9 V
3
4
17
7
8
11
12
MWI
MKI
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
P
tot
T
C
= 25掳C
T
C
= 80掳C
V
GE
=
卤
15 V; R
G
= 22
鈩?
T
VJ
= 125掳C
RBSOA; clamped inductive load; L = 100 碌H
V
CE
= 900 V; V
GE
=
卤
15 V; R
G
= 22
鈩?
T
VJ
= 125掳C
SCSOA; non-repetitive
T
C
= 25掳C
Conditions
T
VJ
= 25掳C to 150掳C
Maximum Ratings
1200
卤
20
90
62
100
V
CES
10
350
V
V
A
A
A
碌s
W
Features
鈥?NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
鈥?HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
鈥?Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered, E 72873
Typical Applications
Symbol
Conditions
Characteristic Values
(T
VJ
= 25掳C, unless otherwise specified)
min.
typ. max.
1.9
2.1
4.5
0.8
200
80
50
680
30
6.0
4.0
3.8
350
2.4
6.5
0.8
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.35 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25掳C
T
VJ
= 125掳C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25掳C
T
VJ
= 125掳C
V
CE
= 0 V; V
GE
=
卤
20 V
Inductive load, T
VJ
= 125掳C
V
CE
= 600 V; I
C
= 50 A
V
GE
= 卤15 V; R
G
= 22
鈩?/div>
鈥?MWI
- AC drives
- power supplies with power factor
correction
鈥?MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
1-4
451
1
2
3
4
