LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and
tuning, or any top鈥搊f鈥搕he鈥搇ine application requiring back鈥搕o鈥揵ack diode
configuration for minimum signal distortion and detuning. This device is
supplied in the SOT鈥?3 plastic package for high volume, pick and place
assembly requirements.
鈥?/div>
High Figure of Merit
鈥?/div>
Q = 450 (Typ) @ V
R
= 3.0 Vdc, f = 50 MHz
鈥?/div>
Guaranteed Capacitance Range
鈥?/div>
Dual Diodes 鈥?Save Space and Reduce Cost
鈥?/div>
Surface Mount Package
鈥?/div>
Available in 8 mm Tape and Reel
鈥?/div>
Monolithic Chip Provides Improved Matching
鈥?/div>
Hyper Abrupt Junction Process Provides High Tuning Ratio
1
2
MMBV609LT1
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
CASE 318鈥?8, STYLE 9
SOT鈥?23 (TO鈥?36AB)
1
2
3
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25掳C
Derate above 25掳C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
20
100
225
1.8
+125
鈥?5 to +150
Unit
Vdc
mAdc
mW
mW/掳C
掳C
掳C
DEVICE MARKING
MMBV609LT1=5L
ELECTRICAL CHARACTERISTICS(T
A
=25掳C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10碌Adc)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Diode Capacitance
(V
R
=3.0 Vdc,f=1.0MHz)
Capacitance Ratio C3/C8
(f=1.0MHz)
Figure of Merit
(V
R
=3.0 Vdc, f=50MHz)
Symbol
V
(BR)R
I
R
C
T
C
R
Q
Min
20
鈥?/div>
26
1.8
250
Typ
鈥?/div>
鈥?/div>
鈥?/div>
MMBV609相关型号PDF文件下载
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