MMJT9435T1 Datasheet

  • MMJT9435T1

  • ON Semiconductor [Bipolar Power Transistors PNP Silicon]

  • 89.33KB

  • ONSEMI

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MMJT9435
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
鈥?/div>
Pb鈭扚ree Packages are Available
鈥?/div>
Collector 鈭扙mitter Sustaining Voltage 鈭?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
CEO(sus)
= 30 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain 鈭?/div>
= 125 (Min) @ I
C
= 0.8 Adc
h
FE
= 90 (Min) @ I
C
= 3.0 Adc
Low Collector 鈭扙mitter Saturation Voltage 鈭?/div>
V
CE(sat)
= 0.275 Vdc (Max) @ I
C
= 1.2 Adc
= 0.55 Vdc (Max) @ I
C
= 3.0 Adc
SOT鈭?23 Surface Mount Packaging
Epoxy Meets UL 94, V鈭? @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
http://onsemi.com
POWER BJT
I
C
= 3.0 AMPERES
BV
CEO
= 30 VOLTS
V
CE(sat)
= 0.275 VOLTS
C 2,4
B1
E3
Schematic
MARKING
DIAGRAM
SOT鈭?23
CASE 318E
STYLE 1
AWW
9435
9435
A
WW
= Specific Device Code
= Assembly Location
= Work Week
PIN ASSIGNMENT
4
C
B
1
C
2
E
3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
September, 2004 鈭?Rev. 5
Publication Order Number:
MMJT9435/D

MMJT9435T1 PDF文件相关型号

MMJT9435T3

MMJT9435T1 产品属性

  • 1,000

  • 分离式半导体产品

  • 晶体管(BJT) - 单路

  • -

  • PNP

  • 3A

  • 30V

  • 550mV @ 300mA,3A

  • -

  • 125 @ 800mA,1V

  • 3W

  • 110MHz

  • 表面贴装

  • TO-261-4,TO-261AA

  • SOT-223

  • 带卷 (TR)

  • MMJT9435T1OSTR

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