MMST918 Datasheet

  • MMST918

  • NPN High Frequency Transistor

  • 71.76KB

  • 3页

  • ROHM

扫码查看芯片数据手册

上传产品规格书

PDF预览

MMST918 / PN918
Transistors
NPN High Frequency Transistor
MMST918 / PN918
Features
1) High current gain-bandwidth product f
T
=600MHz
External dimensions
(Unit : mm)
MMST918
(1)
2.9卤0.2
1.9卤0.2
0.95 0.95
(2)
1.1
+
0.2
鈭?.1
0.8卤0.1
1.6
+
0.2
鈭?/div>
0.1
2.8
0.2
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
MMST918
SMT3
RVX
T146
3000
PN918
TO-92
鈭?/div>
T93
3000
(3)
0
鈭?/div>
0.1
0.4
+
0.1
鈭?.05
All terminals have same dimensions
+
0.1
0.15
鈭?.06
PN918
4.8
0.2
4.8
0.2
3.7
0.2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
MMST918
Collector power
dissipation
PN918
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
15
3
50
0.2
0.310
150
鈭?5
to
+150
Unit
V
V
V
A
W
W
掳C
掳C
(12.7Min.)
Absolute maximum ratings
(Ta = 25掳C)
ROHM : TO-92
EIAJ : SC-43
2.5Min.
0.5
0.1
(1)
(2) (3)
5
2.5
+0.3
鈭?/div>
0.1
0.3
鈭?/div>
0.6
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
+0.15
0.45
鈭?/div>
0.05
2.3
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics
(Ta = 25掳C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Emitter input capacitance
Noise figure
Power gain
Output power
Collector efficiency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
Cib
NF
Gpe
Pout
Min.
30
15
3.0
鈭?/div>
鈭?/div>
20
鈭?/div>
鈭?/div>
600
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
15
30
25
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.01
1.0
鈭?/div>
0.4
1.0
鈭?/div>
1.7
3.0
2.0
6.0
鈭?/div>
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A
碌A
鈭?/div>
V
V
MHz
pF
pF
pF
dB
dB
mW
%
I
C
=1.0碌A
I
C
=3.0mA
I
E
=10碌A
V
CB
=15V
V
CB
=15V
, I
E
=0 , Ta=150
掳C
I
C
=3.0mA
, V
CE
=1.0V
I
C
/I
B
=10mA/1mA
I
C
/I
B
=10mA/1mA
Conditions
I
C
=4.0mA
, V
CE
=10V,
f=100MHz
V
CB
=10V
, I
E
=0 , f=140kHz
V
CB
=0
, I
E
=0 , f=140kHz
V
EB
=0.5V
, I
C
=0 , f=140kHz
I
C
=1.0mA
, V
CE
=6.0V
,RG=400鈩?, f=60MHz
V
CB
=12V
, I
C
=6.0mA
, f=200MHz
V
CB
=15V
, I
C
=8.0mA
, f=500MHz
V
CB
=15V
, I
C
=8.0mA
, f=500MHz
1/2

MMST918相关型号PDF文件下载

  • 型号
    版本
    描述
    厂商
    下载
  • 英文版
    NPN High Frequency Transistor
    ROHM
  • 英文版
    NPN High Frequency Transistor
    ROHM [Rohm...
  • 英文版
    NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES
  • 英文版
    NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES [Di...
  • 英文版
    NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES
  • 英文版
    NPN General Purpose Transistor
    ROHM
  • 英文版
    NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES [Di...
  • 英文版
    NPN General Purpose Transistor
    ROHM [Rohm...
  • 英文版
    NPN SURFACE MOUNT DARLINGTON TRANSISTOR
    DIODES
  • 英文版
    NPN SURFACE MOUNT DARLINGTON TRANSISTOR
    DIODES [Di...
  • 英文版
    NPN SURFACE MOUNT DARLINGTON TRANSISTOR
    DIODES
  • 英文版
    NPN SURFACE MOUNT DARLINGTON TRANSISTOR
    DIODES [Di...
  • 英文版
    TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
    ETC
  • 英文版
    NPN general purpose transistor
    ROHM
  • 英文版
    NPN general purpose transistor
    ROHM [Rohm...
  • 英文版
    NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES
  • 英文版
    High breakdown voltage Low collector-emitter saturation vol...
    金誉
  • 英文版
    NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES [Di...
  • 英文版
    PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES
  • 英文版
    PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
    DIODES [Di...

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:

0571-85317607

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!