MPS2907A
Preferred Device
General Purpose
Transistors
PNP Silicon
http://onsemi.com
COLLECTOR
3
Symbol
VCEO
VCBO
VEBO
IC
PD
625
5.0
PD
1.5
12
TJ, Tstg
鈥?5 to
+150
Watts
mW/掳C
掳C
1
2
3
mW
mW/掳C
TO鈥?2
CASE 29
STYLES 1, 14
Value
鈥?0
鈥?0
鈥?.0
鈥?00
Unit
Vdc
Vdc
Vdc
mAdc
1
EMITTER
STYLE 1
2
BASE
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation
@ TA = 25掳C
Derate above 25掳C
Total Device Dissipation
@ TC = 25掳C
Derate above 25掳C
Operating and Storage Junction
Temperature Range
MARKING DIAGRAMS
Unit
掳C/W
掳C/W
Y
WW
= Year
= Work Week
MPS2
907A
YWW
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
胃JA
R
胃JC
Max
200
83.3
ORDERING INFORMATION
Device
MPS2907A
MPS2907ARLRA
MPS2907ARLRE
MPS2907ARLRM
MPS2907ARLRP
Package
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
TO鈥?2
Shipping
5000 Units/Box
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
2000/Ammo Pack
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
October, 2001 鈥?Rev. 0
Publication Order Number:
MPS2907A/D