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MRF6S20010GNR1 Datasheet

  • MRF6S20010GNR1

  • RF Power Field Effect Transistors

  • 508.75KB

  • 24页

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6S20010N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
鈥?/div>
Typical Two - Tone Performance @ 2170 MHz: V
DD
= 28 Volts, I
DQ
=
130 mA, P
out
= 10 Watts PEP
Power Gain 鈥?15.5 dB
Drain Efficiency 鈥?36%
IMD 鈥?- 34 dBc
鈥?/div>
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 130 mA,
P
out
= 1 Watt Avg., Full Frequency Band (2130 - 2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain 鈥?15.5 dB
Drain Efficiency 鈥?15%
IM3 @ 10 MHz Offset 鈥?- 47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset 鈥?- 49 dBc in 3.84 MHz Channel Bandwidth
鈥?/div>
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
130 mA, P
out
= 1 Watt Avg., Full Frequency Band (1930 - 1990 MHz),
IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?15.5 dB
Drain Efficiency鈥?16%
ACPR @ 885 kHz Offset = - 60 dBc in 30 kHz Bandwidth
鈥?/div>
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 130 mA, P
out
=
4 Watts Avg., Full Frequency Band (1805 - 1880 MHz)
Power Gain 鈥?16 dB
Drain Efficiency 鈥?33%
EVM 鈥?1.3% rms
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
200掳C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF6S20010NR1
MRF6S20010GNR1
1600 - 2200 MHz, 10 W, 28 V
GSM/GSM EDGE
SINGLE N - CDMA
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S20010NR1
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MRF6S20010GNR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +175
200
Unit
Vdc
Vdc
掳C
掳C
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
1

MRF6S20010GNR1 产品属性

  • 500

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS

  • 2.17GHz

  • 15.5dB

  • 28V

  • 10µA

  • -

  • 130mA

  • 10W

  • 68V

  • TO-270BB

  • TO-270 WB-4 鸥翼形

  • 带卷 (TR)

  • MRF6S20010GNR1-NDMRF6S20010GNR1TR

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