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MRF6VP11KHR6 Datasheet

  • MRF6VP11KHR6

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • 446.98KB

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6VP11KH
Rev. 0, 1/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
鈥?/div>
Typical Pulsed Performance at 130 MHz: V
DD
= 50 Volts, I
DQ
= 150 mA,
P
out
= 1000 Watts Peak, Pulse Width = 100
渭sec,
Duty Cycle = 20%
Power Gain 鈥?26 dB
Drain Efficiency 鈥?71%
鈥?/div>
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
鈥?/div>
Qualified Up to a Maximum of 50 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Designed for Push - Pull Operation
鈥?/div>
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP11KHR6
10 - 150 MHz, 1000 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
PART IS PUSH - PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +110
- 6.0, +10
- 65 to +150
150
200
Unit
Vdc
Vdc
掳C
掳C
掳C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80掳C, 1000 W Pulsed, 100
渭sec
Pulse Width, 20% Duty Cycle
Symbol
R
胃JC
Value
(1,2)
0.03
Unit
掳C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6VP11KHR6
1
RF Device Data
Freescale Semiconductor

MRF6VP11KHR6 产品属性

  • 150

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS（双）

  • 130MHz

  • 26dB

  • 50V

  • 5mA

  • -

  • 150mA

  • 1000W

  • 110V

  • NI-1230

  • NI-1230

  • 带卷 (TR)

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