MTP1306 Datasheet

IC型号：
MTP1306
PDF描述：
TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM
文件大小：
175.08KB
PDF页数：
8页
芯片厂家：
MOTOROLA

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MTP1306/D

Advance Information

HDTMOS E-FET.

鈩?/div>

High Density Power FET

N鈥揅hannel Enhancement鈥揗ode Silicon Gate

This advanced high鈥揷ell density HDTMOS power FET is

designed to withstand high energy in the avalanche and commuta-

tion modes. This new energy efficient design also offers a

drain鈥搕o鈥搒ource diode with a fast recovery time. Designed for low

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating area are critical and offer additional safety margin

against unexpected voltage transients.

鈥?/div>

Avalanche Energy Specified

鈥?/div>

Source鈥搕o鈥揇rain Diode Recovery Time Comparable

to a Discrete Fast Recovery Diode

鈥?/div>

Diode is Characterized for Use in Bridge Circuits

鈥?/div>

IDSS and VDS(on) Specified at Elevated Temperature

MTP1306

TMOS POWER FET

75 AMPERES

30 VOLTS

RDS(on) = 0.0065 OHM

CASE 221A鈥?6

TO鈥?20AB

MAXIMUM RATINGS

(TC = 25掳C unless otherwise noted)

Rating

Drain鈥搕o鈥揝ource Voltage

Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥搕o鈥揝ource Voltage 鈥?Continuous

鈥?Non鈥揜epetitive (tp

鈮?/div>

10 ms)

Drain Current 鈥?Continuous

鈥?Continuous @ 100掳C

鈥?Single Pulse (tp

鈮?/div>

碌s)

Total Power Dissipation

Derate above 25掳C

Operating and Storage Temperature Range

Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25掳C

(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25

鈩?

Thermal Resistance 鈥?Junction鈥搕o鈥揅ase

鈥?Junction鈥搕o鈥揂mbient

Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 5.0 seconds

Symbol

VDSS

VDGR

VGS

VGSM

IDM

TJ, Tstg

EAS

280

胃JC

胃JA

0.8

62.5

260

掳C/W

掳C

Value

卤

225

150

1.2

鈥?55 to 150

Unit

Vdc

Vpk

Adc

Apk

Watts

W/掳C

掳C

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E鈥揊ET and HDTMOS are trademarks of Motorola, Inc.

Motorola TMOS

漏

Motorola, Inc. 1997

Power MOSFET Transistor Device Data

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