MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTSF1P02HD/D
Advance Information
Medium Power Surface Mount Products
Micro8鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process to
achieve lowest possible on鈥搑esistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain鈥搕o鈥搒ource diode has a very low reverse
recovery time. Micro8鈩?devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc鈥揹c converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
鈥?/div>
Miniature Micro8 Surface Mount Package 鈥?Saves Board Space
G
鈥?/div>
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS
(TJ = 25掳C unless otherwise noted) *
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25掳C (2)
Drain Current
鈥?Continuous @ TA = 70掳C (2)
Drain Current
鈥?Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25掳C (1)
Linear Derating Factor (1)
Total Power Dissipation @ TA = 25掳C (2)
Linear Derating Factor (2)
Operating and Storage Temperature Range
TMOS Single P-Channel
Field Effect Transistor
MTSF1P02HD
Motorola Preferred Device
SINGLE TMOS
POWER FET
1.8 AMPERES
20 VOLTS
RDS(on) = 0.16 OHM
鈩?/div>
D
CASE 846A鈥?2, Style 1
Micro8
S
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
Symbol
R
胃JA
R
胃JA
Typ.
55
125
Value
20
20
卤
8.0
1.8
1.6
14.4
1.8
14.3
0.78
6.25
鈥?55 to 150
Max.
70
160
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
mW/掳C
Watts
mW/掳C
掳C
Unit
掳C/W
THERMAL RESISTANCE
Rating
Thermal Resistance 鈥?Junction to Ambient, PCB Mount (1)
Thermal Resistance
鈥?Junction to Ambient, PCB Mount (2)
* Negative signs for P鈥揅hannel device omitted for clarity.
(1) When mounted on 1 inch square FR鈥? or G鈥?0 board (VGS = 4.5 V, @ Steady State)
(2) When mounted on minimum recommended FR鈥? or G鈥?0 board (VGS = 4.5 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
AB
Device
MTSF1P02HDR2
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
4000 units
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Berquist Company.
REV 1
Motorola TMOS
漏
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
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