鈩?/div>
Data Sheet
Medium Power Surface Mount Products
MTSF2P02HD
Motorola Preferred Device
TMOS Single P-Channel
Field Effect Transistor
Micro8鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process to
achieve lowest possible on鈥搑esistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain鈥搕o鈥搒ource diode has a very low reverse
recovery time. Micro8鈩?devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc鈥揹c converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
鈥?/div>
Miniature Micro8 Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for Micro8 Package Provided
SINGLE TMOS
POWER FET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.090 OHM
鈩?/div>
D
CASE 846A鈥?2, Style 1
Micro8
G
S
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
DEVICE MARKING
AD
Device
MTSF2P02HDR2
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
4000 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
REV 6
Motorola TMOS
漏
Motorola, Inc. 1997
Power MOSFET Transistor Device Data
1
MTSF2P02HD相关型号PDF文件下载
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型号
版本
描述
厂商
下载
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英文版
SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05...
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英文版
SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05...
MOTOROLA [...
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英文版
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OH...
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英文版
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OH...
MOTOROLA [...
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英文版
SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 O...
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英文版
SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 O...
MOTOROLA [...
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英文版
SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.09...
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英文版
SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.09...
MOTOROLA [...
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英文版
SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS
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英文版
SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.04...
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英文版
SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.04...
MOTOROLA [...
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英文版
SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.04...
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英文版
SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.04...
MOTOROLA [...
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英文版
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS
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英文版
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS
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英文版
SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS
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英文版
SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS
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英文版
SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS
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英文版
SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS
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英文版
SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS
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