TMOS E-FET.
鈩?/div>
Power Field Effect Transistor
Designer's
MTY100N10E
Motorola Preferred Device
N鈥揅hannel Enhancement鈥揗ode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain鈥搕o鈥搒ource diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
IDSS and VDS(on) Specified at Elevated Temperature
D
TMOS POWER FET
100 AMPERES
100 VOLTS
RDS(on) = 0.011 OHM
庐
G
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
EAS
R
胃JC
R
胃JA
TL
CASE 340G鈥?2, STYLE 1
TO鈥?64
MAXIMUM RATINGS
(TC = 25掳C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1 M鈩?
Gate鈥揝ource Voltage 鈥?Continuous
Gate鈥揝ource Voltage
鈥?Non鈥揜epetitive (tp
鈮?/div>
10 ms)
Drain Current 鈥?Continuous @ TC = 25掳C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation
Derate above 25掳C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25掳C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 100 Apk, L = 0.1 mH, RG = 25
鈩?/div>
)
Thermal Resistance 鈥?Junction to Case
Thermal Resistance
鈥?Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Value
100
100
卤
20
卤
40
100
300
300
2.38
鈥?55 to 150
250
0.42
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/掳C
掳C
mJ
掳C/W
掳C
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
E鈥揊ET and Designer鈥檚 are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola TMOS
漏
Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1
MTY100N10E 产品属性
25
分离式半导体产品
FET - 单
-
MOSFET N 通道，金属氧化物
标准型
100V
100A
11 毫欧 @ 50A，10V
4V @ 250µA
378nC @ 10V
10640pF @ 25V
300W
通孔
TO-264-3，TO-264AA
TO-264
管件
MTY100N10EOS
MTY100N10E相关型号PDF文件下载
-
型号
版本
描述
厂商
下载
-
英文版
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
-
英文版
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
-
英文版
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
-
英文版
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
-
英文版
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
-
英文版
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MOTOROLA [...
-
英文版
TMOS POWER FET 16 AMPERES 800 VOLTS
-
英文版
TMOS POWER FET 16 AMPERES 800 VOLTS
-
英文版
TMOS POWER FET 100 AMPERES 100 VOLTS
-
英文版
TMOS POWER FET 100 AMPERES 100 VOLTS
-
英文版
TMOS POWER FET 10 AMPERES 1000 VOLTS
-
英文版
TMOS POWER FET 14 AMPERES 1000 VOLTS
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