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ADVANCE INFORMATION

MX29LV040

4M-BIT [512K x 8] CMOS SINGLE VOLTAGE

3V ONLY EQUAL SECTOR FLASH MEMORY

FEATURES

鈥?Extended single - supply voltage range 2.7V to 3.6V

鈥?524,288 x 8 only

鈥?Single power supply operation

- 3.0V only operation for read, erase and program

operation

鈥?Fast access time: 55R/70/90ns

鈥?Low power consumption

- 20mA maximum active current

- 0.2uA typical standby current

鈥?Command register architecture

- 8 equal sector of 64K-Byte each

- Byte Programming (9us typical)

- Sector Erase (Sector structure 64K-Byte x8)

鈥?Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

鈥?Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

鈥?/div>

then resumes the erase.

Status Reply

- Data polling & Toggle bit for detection of program and

erase operation completion.

Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Any combination of sectors can be erased with erase

suspend/resume function.

- Tempoary sector unprotect allows code changes in

previously locked sectors.

100,000 minimum erase/program cycles

Latch-up protected to 100mA from -1V to VCC+1V

Low VCC write inhibit is equal to or less than 2.3V

Package type:

- 32-pin PLCC

- 32-pin TSOP

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

鈥?/div>

GENERAL DESCRIPTION

The MX29LV040 is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29LV040 is

packaged in 32-pin PLCC and TSOP. It is designed to

be reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29LV040 offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29LV040 has separate chip enable (CE) and output

enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV040 uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV040 uses a 2.7V~3.6V VCC supply

to perform the High Reliability Erase and auto Program/

Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0722

REV. 0.7, JUL. 12, 2001

1

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