MXP3000 Series
GaAs PIN Photodiode Chips
O
PTO
E
LECTRONIC
P
RODUCTS
P
RODUCT
P
REVIEW
DESCRIPTION
KEY FEATURES
W W W .
Microsemi
.COM
Microsemi鈥檚 GaAs PIN
Photodiode chips are ideal for wide
bandwidth 850nm optical
networking applications.
The five devices offered feature
excellent dark current ratings of 1-3
nA, and a breakdown voltage of 20
Volts with the bandwidth options for
1.4 GHz (active area of 250 mm
2
),
1.75 GHz(active area of 200 mm
2
), 5
GHz (active area of 100 mm
2
), 7 GHz
(active area of 60 mm
2
), and 8.75
GHz (active area of 30 mm
2
),
The MXP3000 series of
photodiodes are originally offered in
die form for manufacturers of
photodiode modules, supervisory
pump laser circuits, and combination
PIN Photodiode-transimpedance
amplifier hybrids.
!"
Low Dark Current
!"
Extremely low capacitance
!"
Wide bandwidth
!"
Fast response time
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
!"
850nm Fiber Optic
Applications
IMPORTANT:
For the most current data, consult
MICROSEMI鈥檚
website:
http://www.microsemi.com
Item
Active Area(Dia.)
Photo Sensitive Area
Detection Range
Responsivity
Dark Current
Capacitance
Rise/Fall Time
Bandwidth
Breakdown Voltage
Chip Size
Bonding Pad Size
Sym
鈥?/div>
鈥?/div>
R
I
dark
C
t
r
/t
f
VB
Part Ratings and Characteristics
MXP3001
MXP3002
MXP3003
MXP3004
30
0.0007
850
0.45
1
0.3
40
8.75
20
350 x 350
40 x 100
60
0.0028
850
0.45
1
0.4
50
7
20
350 x 350
40 x 100
100
0.0078
850
0.45
1
0.6
70
5
20
350 x 350
100
200
0.0314
850
0.45
2
1.5
200
1.75
20
500 x 500
100
MXP3005
250
0.0491
850
0.45
3
2
250
1.4
20
500 x 500
100
Unit
mm2
mm2
Nm
A/W
nA
pF
ps
GHz
um x um
um x um
Test Condition
鈥?/div>
鈥?/div>
V
R
=-5V, l = 850nm
V
R
=-5V
V
R
=-5V
V
R
=-5V, @ 850nm
V
R
=-5V, @ 850nm
I
R
=10uA
MXP3000 S
ERIES
MXP3000 S
ERIES
Copyright
铮?/div>
2000
MSC1592.PDF 2000-10-16
Microsemi
Opto Electronics Products Group
2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256
http://www.microsemi.com/opto
Page 1
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