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NE68000 Datasheet

  • NE68000

  • NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 247.10KB

  • 19页

  • NEC

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NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 10 GHz
鈥?/div>
LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
鈥?/div>
HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
鈥?EXCELLENT LOW VOLTAGE
LOW CURRENT PERFORMANCE
00 (CHIP)
NE680
SERIES
E
B
35 (MICRO-X)
NEC's NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
f
T
makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.
ers
mb ot
:
T E ar t n u e n
DESCRIPTION
NO g p
ar
gn .
si
et
A S E ow i n
he ew de r
LE
P
tas r n
oll
fo
da
e f
Th
h i s d e d f o o ff i c e
m t
fro mmen sales
co
al l
re
e c
eas s:
Pl
a il 5
et
d
03
E 68
N
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
NE68018
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
6V, 5 mA
3V, 5 mA
25
20
15
Associated Gain, G
A
(dB)
Noise Figure, NF (dB)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
2.5
2.0
10
5
1.5
1.0
.5
300
500
1000
2000
3000
Frequency, f (GHz)
California Eastern Laboratories

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    TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-343R
    ETC
    NE68018

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