NTB75N03RT4 Datasheet

  • NTB75N03RT4

  • Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220

  • 77.09KB

  • 8页

  • ONSEMI

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NTB75N03R, NTP75N03R
Power MOSFET
75 Amps, 25 Volts
N鈭扖hannel D
2
PAK, TO鈭?20
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
http://onsemi.com
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
75 AMPERES
25 VOLTS
R
DS(on)
= 5.6 m鈩?(Typ)
4
Unit
V
dc
V
dc
掳C/W
W
A
A
掳C/W
W
A
掳C/W
W
A
掳C
mJ
1
Gate
260
掳C
2
Drain
3
Source
75N03
Y
WW
1
Gate
P75N03R
YWW
1
2
TO鈭?20AB
CASE 221A
STYLE 5
3
1
2
3
D
2
PAK
CASE 418AA
STYLE 2
4
25
卤20
1.68
74.4
75
225
60
2.08
12.6
100
1.25
9.7
MAXIMUM RATINGS
(T
J
= 25掳C Unless otherwise specified)
Parameter
Drain鈭抰o鈭扴ource Voltage
Gate鈭抰o鈭扴ource Voltage 鈭?Continuous
Thermal Resistance 鈭?Junction鈭抰o鈭扖ase
Total Power Dissipation @ T
C
= 25掳C
Drain Current
鈭?Continuous @ T
C
= 25掳C
鈭?Single Pulse (t
p
= 10
ms)
Thermal Resistance 鈭?Junction鈭抰o鈭扐mbient
(Note 1)
Total Power Dissipation @ T
A
= 25掳C
Drain Current 鈭?Continuous @ T
A
= 25掳C
Thermal Resistance 鈭?Junction鈭抰o鈭扐mbient
(Note 2)
Total Power Dissipation @ T
A
= 25掳C
Drain Current 鈭?Continuous @ T
A
= 25掳C
Operating and Storage Temperature Range
Single Pulse Drain鈭抰o鈭扴ource Avalanche
Energy 鈭?Starting T
J
= 25掳C
(V
DD
= 30 V
dc
, V
GS
= 10 V
dc
, I
L
= 12 A
pk
,
L = 1 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from Case for 10 Seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
DM
R
qJA
P
D
I
D
R
qJA
P
D
I
D
T
J
, T
stg
E
AS
Value
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
鈭?5 to
150
71.7
75N03R
YWW
2
Drain
3
Source
T
L
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTP75N03R
NTB75N03R
NTB75N03RT4
Package
TO鈭?20AB
D
2
PAK
D
2
PAK
Shipping
鈥?/div>
50 Units/Rail
50 Units/Rail
800/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2003
1
October, 2003 鈭?Rev. 2
Publication Order Number:
NTB75N03R/D

NTB75N03RT4 产品属性

  • 800

  • 分离式半导体产品

  • FET - 单

  • -

  • MOSFET N 通道,金属氧化物

  • 逻辑电平门

  • 25V

  • 9.7A

  • 8 毫欧 @ 20A,10V

  • 2V @ 250µA

  • 13.2nC @ 10V

  • 1333pF @ 20V

  • 1.25W

  • 表面贴装

  • TO-263-3,D²Pak(2 引线+接片),TO-263AB

  • D2PAK

  • 带卷 (TR)

  • NTB75N03RT4OS

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