NTE2353
Silicon NPN Transistor
TV Horizontal Deflection Output
w
/Damper Diode
Features:
D
High Speed: t
f
= 100nsec
D
High Breakdown Voltage: V
CBO
= 1500V
D
On鈥揅hip Damper Diode
Absolute Maximum Ratings:
(T
A
= +25掳C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Dissipation (T
C
= +25掳C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150掳C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5掳 to +150掳C
Electrical Characteristics:
(T
A
= +25掳C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
Test Conditions
V
CE
= 1500V
V
CB
= 800V
V
EB
= 4V
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 8A
I
EC
= 10A
I
C
= 6A, I
B1
= 1.2A, I
B2
= 2.4A
Min
Typ
Max Unit
I
CES
I
CBO
鈥?/div>
鈥?/div>
800
40
鈥?/div>
鈥?/div>
8
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
1.0
10
鈥?/div>
130
5
1.5
鈥?/div>
10
2.0
0.3
mA
碌A
V
mA
V
V
Collector Sustain Voltage
Emitter Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
V
CEO(sus)
I
C
= 100mA, I
B
= 0
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
V
F
t
f
Diode Forward Voltage
FallTime
V
碌s
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