2N7052 / 2N7053 / NZT7053
Discrete POWER & Signal
Technologies
2N7052
2N7053
NZT7053
C
E
C
B
TO-92
E
C
B
E
C
TO-226
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25掳C unless otherwise noted
Parameter
Value
100
100
12
1.5
-55 to +150
Units
V
V
V
A
掳C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25掳C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25掳C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N7052
625
5.0
83.3
200
Max
2N7053
1,000
8.0
125
50
*NZT7053
1,000
8.0
125
Units
mW
mW/掳C
掳C/W
掳C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
茫
1997 Fairchild Semiconductor Corporation
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