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- 75A D

2

PAK/I

2

PAK/TO-220

STripFET鈩?II POWER MOSFET

TYPE

STB75NF75L/-1

STP75NF75L

s

STP75NF75L

STB75NF75L STB75NF75L-1

V

DSS

75 V

R

DS(on)

<0.011

鈩?/div>

<0.011

鈩?/div>

I

D

75 A

3

1

TYPICAL R

DS

(on) = 0.009鈩?/div>

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW THRESHOLD DRIVE

3

12

D

2

PAK

TO-263

I

2

PAK

TO-262

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements

.

3

1

2

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

DC MOTOR CONTROL

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

(鈥?

I

D

I

DM

(鈥⑩€?

P

tot

dv/dt

(1)

E

AS (2)

T

stg

T

j

Parameter

Drain-source Voltage (V

GS

= 0)

Drain-gate Voltage (R

GS

= 20 k鈩?

Gate- source Voltage

Drain Current (continuous) at T

C

= 25掳C

Drain Current (continuous) at T

C

= 100掳C

Drain Current (pulsed)

Total Dissipation at T

C

= 25掳C

Derating Factor

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature

Value

75

卤 15

75

70

300

2

20

680

-55 to 175

Unit

V

A

W

W/掳C

V/ns

mJ

掳C

(鈥? Current limited by package

(鈥⑩€?

Pulse width limited by safe operating area.

April 2002

.

(1) I

SD

鈮?/div>

75A, di/dt

鈮?/div>

500A/碌s, V

DD

鈮?/div>

V

(BR)DSS

, T

j

鈮?/div>

T

JMAX.

(2) Starting T

j

= 25

o

C, I

D

= 37.5A, V

DD

= 30V

1/11

型号

版本

描述

厂商

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