碌TrenchMOS鈩?/div>
standard level FET
MBD128
Rev. 01 鈥?11 February 2004
Product data
1. Product pro铿乴e
1.1 Description
Dual N-channel enhancement mode 铿乪ld-effect transistor in a plastic package using
TrenchMOS鈩?technology.
1.2 Features
s
Surface mounted package
s
Standard level threshold voltage
s
Low on-state resistance
s
Footprint 40% smaller than SOT23
s
Fast switching
s
Dual device.
1.3 Applications
s
Driver circuits
s
Switching in portable appliances.
1.4 Quick reference data
s
V
DS
鈮?/div>
60 V
s
P
tot
鈮?/div>
0.41 W
s
I
D
鈮?/div>
0.49 A
s
R
DSon
鈮?/div>
920 m鈩?
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simpli铿乪d outline and symbol
Description
source1 (s1)
gate1 (g1)
drain2 (d2)
source2 (s2)
gate2 (g2)
drain1 (d1)
s1
1
Top view
2
3
MSA370
Simpli铿乪d outline
6
5
4
Symbol
d1
d2
g1
s2
g2
MSD901
SOT363 (SC-88)
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